Short Circuit Currents Improvements of In-doped Silicon (n) Structure

dc.contributor.author	Mohamad, Wagah F.
dc.date.accessioned	2018-07-22T08:43:24Z
dc.date.available	2018-07-22T08:43:24Z
dc.date.issued	2006-01-01
dc.identifier.issn	1815-3852
dc.identifier.uri	https://journal.uob.edu.bh:443/handle/123456789/420
dc.description.abstract	Theoretical and practical calculations of short circuit currents of In-doped Silicon (n) structure have been calculated. Theoretically maximum value of generated current was 5.25 mA at 0.5x1017 cm-3 indium concentrations. Practically the ideal I-V characteristic of the structure is obtained with indium thickness of 1500 °A annealed at 1100 r for an hour. This structure has a knee voltage at 0.8 V with very small value of reverse saturation current and 1.6 ideality factor. The maximum photogenerated current about 2.3 mA is obtained at 0.396x1017 CM-3 of indium concentration. Theoretical & practical results agree that the maximum photo generated current occurs at zero cell output voltage.	en_US
dc.language.iso	en	en_US
dc.publisher	University of Bahrain	en_US
dc.rights	Attribution-NonCommercial-ShareAlike 4.0 International	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/4.0/	*
dc.subject	In-doped Silicon	en_US
dc.subject	IPV Effect	en_US
dc.subject	Silicon (n) Responsivity	en_US
dc.title	Short Circuit Currents Improvements of In-doped Silicon (n) Structure	en_US
dc.type	Article	en_US
dc.source.title	Arab Journal of Basic and Applied Sciences
dc.abbreviatedsourcetitle	AJBAS