Short Circuit Currents Improvements of In-doped Silicon (n) Structure

Abstract

Theoretical and practical calculations of short circuit currents of In-doped Silicon (n) structure have been calculated. Theoretically maximum value of generated current was 5.25 mA at 0.5x1017 cm-3 indium concentrations. Practically the ideal I-V characteristic of the structure is obtained with indium thickness of 1500 °A annealed at 1100 r for an hour. This structure has a knee voltage at 0.8 V with very small value of reverse saturation current and 1.6 ideality factor. The maximum photogenerated current about 2.3 mA is obtained at 0.396x1017 CM-3 of indium concentration. Theoretical & practical results agree that the maximum photo generated current occurs at zero cell output voltage.