University of Bahrain
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Circuit Techniques using Substrate Bias for Design of Radiation Hardened Voltage Controlled Oscillator

Show simple item record Jain, C P 2018-07-09T06:52:24Z 2018-07-09T06:52:24Z 2017-05-01
dc.identifier.issn 2210-142X
dc.description.abstract Rradiation effect causes some major impact on CMOS devices, such as the switch point, change output rail voltage, and the increased leakage current. If radiation is high, proper inverter operation fails. We suggest a scheme to maintain the output voltage by making Vgs negative when the NMOS cuts off. This paper shows the structural CMOS with and without radiation and variation of electrical properties of device under various radiations doses and proposes a modified CMOS circuit which mitigates radiation effects by improving switch point in I-V characteristic. In order to redesign the circuit for radiation resistance; the above radiation hardened inverter circuit is implemented in each of Voltage Controlled Oscillator (VCO) gates using Radiation Hardened By Design (RDBD) technique. en_US
dc.language.iso en_US en_US
dc.publisher University of Bahrain en_US
dc.rights Attribution-NonCommercial-ShareAlike 4.0 International *
dc.rights.uri *
dc.subject Radiation Hardened By Design (RHBD) en_US
dc.subject Single Event Transients en_US
dc.subject Total Ionizing Dose en_US
dc.subject VCO en_US
dc.subject CMOS en_US
dc.title Circuit Techniques using Substrate Bias for Design of Radiation Hardened Voltage Controlled Oscillator en_US
dc.type Article en_US
dc.volume 06
dc.issue 03
dc.pagestart 149
dc.pageend 154
dc.source.title International Journal of Computing and Digital Systems
dc.abbreviatedsourcetitle IJCDS

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